Scanning microwave impedance microscopy (sMIM) in electronic and quantum materials

Abstract

Scanning Microwave Impedance Microscopy (sMIM) is a sensitive electrical measurement technique which can characterize local static and temporal variations of electrical permittivity, and conductivity of materials and devices as well as for failure analysis. It is being used to characterize dielectrics, semiconductors and their doping response, and metals. Measurements can be made at room temperature down to cryogenic temperatures where quantum effects become important. Leveraging near-field electrical interactions between a probe and the sample, sMIM can measure and image electrical properties and operation at the nanoscale to micron scale by incorporation into an atomic force microscope. sMIM is being applied to a wide range of industrial and scientific applications to improve fundamental and functional understanding and operational performance of advanced, exploratory and quantum electronic devices and materials and their fabrication.