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Journal ArticleOPEN ACCESS

Exciton determination of strain parameters in InSb∕AlxIn1−xSb quantum wells

  • Kasturiarachchi T
  • Brown F
  • Dai N
  • et al.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena (2006) 24(5) 2429-2431
DOI: 10.1116/1.2348885
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Abstract

Excitons in semiconductors can be used as a tool to probe various material and structural properties. The authors studied strain-related materials parameters in InSb∕AlxIn1−xSb quantum well structures. By changing the Al concentration in the barrier layers (0.03

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Kasturiarachchi, T., Brown, F., Dai, N., Khodaparast, G. A., Doezema, R. E., Goel, N., … Santos, M. B. (2006). Exciton determination of strain parameters in InSb∕AlxIn1−xSb quantum wells. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 24(5), 2429–2431. https://doi.org/10.1116/1.2348885

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