Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer

Abstract

We propose a method for evaluating the lattice-plane orientation of homo-epitaxial GaN thin films using X-ray diffraction topography. The GaN 1124 diffraction peak and its rocking curve at every point in the wafer were recorded using an area detector. In addition, we describe the reconstruction method for the [0001] vector with qx, qy, and qz components of the physical surface of the sample using a matrix obtained from two equivalent 1124 diffraction topographic images. We obtained the qx, qy, and qz components of every point of the 2-in. wafer from images recorded at azimuthal angles of 0 and 120°.