Structural optical and electrical studies of AlGaN/GaN hetrostructures with AIN Interlayer grown on sapphire substrate by MOCVD

Abstract

In the present study of AlGaN/GaN heterostructures with high quality AIN interlayer (A1N-IL) were grown by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrate. The AIN inter-layer thickness was varied as lnm, 2nm and 3 nm. The High-resolution X-ray diffraction (HRXRD) FWHM for (002) plane of GaN was measured for AlGaN/GaN with difTerent A1N-EL thickness. The surface roughness was measured using Atomic Force Microscope (AFM). The Photoluminescence (PL) band edge emission, the room temperature and low temperature hall measurement show the enhancement of two-dimensional electron gas (2DEGs) sheet carrier density due to A1N-IL. The results have been discussed in detail.