Observation of Low Mobility Electron in Vacancy Doped LPE Grown HgCdTe

Abstract

Variable magnetic field Hall and resistivity data at different temperatures for vacancy doped LPE grown Hg0.71Cd0.29Te samples have been analyzed using multicarrier fitting. Samples grown from Te-rich melts by Horizontal Slider techniques have been investigated. Measurements were carried out at temperatures from 20K to 300K using magnetic fields in 0-8Tesla range. In addition to heavy holeand light hole an electron with low mobility (77K value of ~812 cm2V-1s-1) was observed at temperatures below 150 K. Its presence has been attributed to interface as confirmed by Hall measurements of the interfacial layer (~4μm above CdZnTe substrate) and is reported here for HgCdTe for the first time.