Fluorine-ion-beam modification of magnetic properties of thin GaMnAs films

Abstract

Magnetic and electrical transport properties of fluorine-ion-beam irradiated GaMnAs films were studied as a function of ion fluence and energy of impinging ions. The different nature of defects created by ions of low- and high-energies is explored in this work by means of transport and magnetization measurements. Our results show that the saturation magnetization of the irradiated samples is suppressed as the ion fluence is increased. Interestingly, however, the same effect is not observed in the case of critical temperature, which remains nearly the same for irradiated and non-irradiated samples measured by superconducting quantum interference device. Magnetotransport measurements appear to provide more reliable results regarding the critical temperature, since they are consistent with the ion-irradiation-induced disorder in the GaMnAs film, quantified here as the increase of the resistivity. We discuss this behavior based on the inhomogeneity of damages caused by the irradiation process.