Abstract
We present the TIBERCAD multiscale device simulation software. The scope of the project is a full description of charge transport and optoelectronic properties of devices with embedded active regions of nanometer-scale. We show simulations of a GaN LED that requires modeling of strain, transport of electrons, holes and excitons and device heating.
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CITATION STYLE
Auf Der Maur, M., Povolotskyi, M., Sacconi, F., Romano, G., Petrolati, E., & Di Carlo, A. (2007). Multiscale simulation of electronic and optoelectronic devices with TiberCAD. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 245–248). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_58
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