Effect of the heat dissipation system on hard-switching gan-based power converters for energy conversion

Abstract

The design of a cooling system is critical in power converters based on wide-bandgap (WBG) semiconductors. The use of gallium nitride enhancement-mode high-electron-mobility transistors (GaN e-HEMTs) is particularly challenging due to their small size and high power capability. In this paper, we model, study and compare the different heat dissipation systems proposed for high power density GaN-based power converters. Two dissipation systems are analysed in detail: bottom-side dissipation using thermal vias and top-side dissipation using different thermal interface materials. The effectiveness of both dissipation techniques is analysed using MATLAB/Simulink and PLECS. Furthermore, the impact of the dissipation system on the parasitic elements of the converter is studied using advanced design systems (ADS). The experimental results of the GaN-based converters show the effectiveness of the analysed heat dissipation systems and how top-side cooled converters have the lowest parasitic inductance among the studied power converters.