Theoretical Analysis of the Electrical and Optical Properties of ZnS

Abstract

This chapter deals with the electrical and optical properties of ZnS by using the first principle plane-wave pseudopotential technique [ab initio Technique]. The obtained results show that the bandgap of ZnS system becomes narrow under the transition state condition, and also it changes the conductivity of ZnS from semiconductor to metal behavior. Zinc sulfide is a direct bandgap-type non-toxic semiconductor material. Moreover, it is used as an optical device. The above-mentioned properties show that the ZnS is a favorable candidate for luminous materials as well as solar photovoltaic cell. Doping of rare earth element and transition element in ZnS is used as a good phosphor material.