MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System

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Abstract

We report charge-compensated modified uni-traveling-carrier photodiodes (MUTC-PDs) with high photocurrent and fast response, grown using liquid group-V precursor, in an AIXTRON MOCVD system. The liquid group-V precursors involve less toxicity with better decomposition characteristics. Device fabrication is completed with standard processing techniques with BCB passivation. DC and RF measurements are carried out using a single mode fiber at 1.55 m. For a 24-m-diameter device (with diode ideality factor of 1.34), the dark current is 32.5 nA and the 3-dB bandwidth is ≫20 GHz at a reverse bias of 5 V, which are comparable to the theoretical values. High photocurrent of over 150.0 mA from larger diameter (>60 m) devices is obtained. The maximum DC responsivity at 1.55 m wavelength is 0.51 A/W, without antireflection coating. These photodiodes play a key role in the progress of the future THz communication systems.

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Singh, N., Ho, C. K. F., Tina, G. X., Chandra Mohan, M. K., Lee, K. E. K., Wang, H., & Lam, H. Q. (2015). MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System. Journal of Nanomaterials, 2015. https://doi.org/10.1155/2015/436851

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