Diamond MOSFET with MoO3/Si3N4doubly stacked gate dielectric

Abstract

A hydrogen terminated diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectrics was fabricated on a single crystalline diamond sample. Compared to a device with single MoO3 layer gate dielectrics, the device performance was improved due to the improvement in the gate voltage, which benefited from the doubly stacked gate dielectric. The device with 4 μm gate length shows a maximum output current of 118.67 mA/mm and an ultra-low resistance of 36.15 ω mm at the gate voltage of -5 V. In addition, the device shows a maximum transconductance of 35 mS/mm. These results indicate that the dielectric with high work function has high potential to achieve a high-performance diamond MOSFET.