Field-effect transistors 1: Introduction of early transistor developments for power switching and RF applications

Abstract

In this chapter, we describe the early development of gallium oxide transistors that led to the most common gallium oxide device: n-type, depletion-mode, metal insulator semiconductor field effect transistor. We relate the enticing material properties of gallium oxide described in earlier chapters to the requirements in design and fabrication of marketable devices for low-loss power switching and radio frequency applications. A route for device optimization is shown by maximizing electric field in the drift region while reducing parasitic resistance. We analyze the developments that will be required to overcome device-related technical barriers such as achieving low contact resistance, reducing effects of self-heating, and increasing device gain. The chapter concludes with recent research and goals for gallium oxide transistors moving forward with subsequent chapters detailing these topics.