Effect of gate electrode work-function on source charge injection in electrolyte-gated organic field-effect transistors

Abstract

Systematic investigation of the contact resistance in electrolyte-gated organic field-effect transistors (OFETs) demonstrates a dependence of source charge injection versus gate electrode work function. This analysis reveals contact-limitations at the source metal-semiconductor interface and shows that the contact resistance increases as low work function metals are used as the gate electrode. These findings are attributed to the establishment of a built-in potential that is high enough to prevent the Fermi-level pinning at the metal-organic interface. This results in an unfavorable energetic alignment of the source electrode with the valence band of the organic semiconductor. Since the operating voltage in the electrolyte-gated devices is on the same order as the variation of the work functions, it is possible to tune the contact resistance over more than one order of magnitude by varying the gate metal. A dependence of charge injection on the gate electrode work function is demonstrated by systematically investigating the contact resistance in electrolyte-gated OFETs. This analysis reveals contact-limitations at the metal-semiconductor interface and shows that contact resistance increases as low work function metals are used as gate electrodes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.