Microstructure and electrical properties of microwave sintered Nb-doped NBT ceramics

Abstract

Nb5+-doped sodium bismuth titanate (NBT) ceramics ((Na0.5Bi0.5)1-x/2Ti1-xNbxO3where x = 0, 0.005, 0.01 and 0.015) were obtained by microwave assisted solid state reaction route and microwave sintered at 1000 °C. Microwave processing technique was chosen for the sintering as it is a powerfulmethod which enables sintering in a short time with fast heating rate avoiding grain growth. The influence of Nb5+-doping on microstructure and electrical properties of the NBT ceramics was studied. X-ray diffraction analyses revealed that solubility limit of niobium in NBT lattice is up to 1mol%, as with further increase in niobium concentration pyrochlore appeared. Microstructure of all the ceramics was investigated by field emission scanning electron microscopy and it was observed that the average grain size decreased with doping. Temperature dependent dielectric study was carried out for all the ceramics at different frequency. All ceramics show diffusive dielectric behaviour around Tmand introduction of Nb even increases compositional fluctuation compared to the parent NBT. Nb-doping shifts the Tmtoward lower temperature. Leakage current study showed that for whole range of electric field ohmic type conduction mechanism is dominant for all the ceramics. Room temperature polarization-electric field (P-E) hysteresis loop confirms the ferroelectric behaviour of all the ceramics.