Beyond conventional CMOS technology: Challenges for new design concepts

Abstract

Technological advancements push the dimensions of CMOS (Complementary Metal-Oxide-Semiconductor) towards the ultimate scaling limits. This represents a driver in the research for alternative computation concepts beyond the CMOS. The chapter analyzes first the near term alternative, taking as example the SRAM (Static Random Access Memory). In the second part of the chapter, future circuits based on Carbon Nanotubes (CNTs), Nano-Wires (NWs) and Graphene Nano Ribbons (GNRs) are discussed. Two cases are distinguished: the memories and the logic cells. Passive and active Crossbars matrices are discussed for the memory case. Reconfigurable logic circuits based on Double Gate CNTs devices are reviewed for the logic cells. The final part of the chapter is dedicated to the hybrid molecular-CMOS architectures.