CMOS on-chip stacked Marchand balun for millimeter-wave applications

Abstract

A millimeter-wave CMOS on-chip stacked Marchand balun is presented in this paper. The balun is fabricated using a top pad metal layer as the single-ended port arid is stacked above two metal conductors at the next highest metal layer in order to achieve sufficient coupling to function as the differential ports. Strip metal shields are placed underneath the structure to reduce substrate losses. An amplitude imbalance of 0.5 dB is measured with attenuations below 6.5 dB at the differential output ports at 30 GHz. The corresponding phase imbalance is below 5 degrees. The area occupied is 229 μm × 229 μm. © IEICE 2007.