Floating zone method, edge-defined film-fed growth method, and wafer manufacturing

Abstract

This chapter describes the floating zone growth method of β-Ga2O3, the edge-defined film-fed growth of β-Ga2O3, and the manufacturing of β-Ga2O3 wafers. The floating zone method section briefly mentions the method’s history and typical growth conditions. The section on edge-defined film-fed growth method discusses the history, growth sequence, and conditions. It also covers the material properties of edge-defined film-fed grown β-Ga2O3 such as twin boundaries, dislocations, nanovoids, residual impurities, intentional doping, and dopant distribution. The wafer manufacturing section describes the basic wafer process and the effect of annealing on carrier concentration.