Abstract
The possibility of growing a GeHx quantum dot from Ge2H6 at room temperature was addressed. This task was accomplished under the conditions where only an electric field can be the activation source for nanostructure formation under an STM tip.
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CITATION STYLE
APA
Mezhenny, S., Lyubinetsky, I., Levy, J., & Yates, J. T. (2001). Field-induced growth of a quantum dot from Ge2H6 precursor gas using the scanning tunneling microscope. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 19(2), 567–568. https://doi.org/10.1116/1.1358885
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