Molecular Diffusion in a-SiO2: Its Role in Annealing Radiation-Induced Defect Centers

Pfeffer, R. L. (1988). Molecular Diffusion in a-SiO2: Its Role in Annealing Radiation-Induced Defect Centers. In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface (pp. 169–176). Springer US. https://doi.org/10.1007/978-1-4899-0774-5_18