Ambipolar Behaviour of Tunnel Field Effect Transistor (TFET) as an Advantage for Biosensing Applications

Abstract

In this work, an analytical model for a dielectric modulated (DM) double gate (DG) Tunnel Field Effect Transistor (TFET) working as a biosensor for label free electrical detection of biomolecules has been proposed. It has been analyzed that the ambipolar behaviour of tunnel field effect transistor can also be used for sensing of the biomolecules when the negative voltage is applied to n-TFET. In this paper the ON current (for both negative and positive gate voltage) of the TFET has been used as the sensing parameter. The Characteristics trends are verified via ATLAS (SILVACO) device simulation results.