Abstract
A perturbation technique is developed for the analysis of random doping induced fluctuations (RDF) of small-signal equivalent circuit parameters in semiconductor devices. This technique is based on the computation of the doping sensitivity functions of parameters of interest by using the admittance matrix parameters and is applied to the study of RDF of equivalent circuit parameters in a 40-nm channel length MOSFET. The presented technique can be easily extended to the analysis of RDF in other semiconductor devices such as SOI, HEMT, etc.
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CITATION STYLE
Oniciuc, L., & Andrei, P. (2007). RDF analysis of small-signal equivalent circuit parameters in MOSFET devices. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 449–452). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_109
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