This paper provides a new method to estimate very high frequency (VHF) conducted noise from power electronic devices using numerical analysis. The switching waveforms generated by power semiconductor devices, which are the main noise sources, are calculated by a circuit simulation that uses semiconductor device models. The transfer functions from noise sources to voltage measurement points are calculated by the S-parameters on a power electronic device. The S-parameters are calculated by a 3D electromagnetic simulator. The combined results of circuit simulation and electromagnetic analysis create a good correlation with the actual experimental result in the frequency range of 200 MHz and below. © 2013 The Institute of Electrical Engineers of Japan.
CITATION STYLE
Kondo, Y., Izumichi, M., Yamamoto, T., & Hirano, N. (2013). VHF conducted emission simulation of power electronic devices. IEEJ Transactions on Industry Applications, 133(5), 510–517. https://doi.org/10.1541/ieejias.133.510
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