Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

S. G. Pavlov; N. Deßmann; B. Redlich; A. F.G. Van Der Meer; N. V. Abrosimov; H. Riemann; R. Kh Zhukavin; V. N. Shastin; H. W. Hübers

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Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

Physical Review X (2018) 8(4)

DOI: 10.1103/PhysRevX.8.041003

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Abstract

We report on an optically pumped laser where photons are simultaneously generated by population inversion and by stimulated Raman scattering in the same active medium, namely crystalline silicon doped by bismuth (SiBi). The medium utilizes three electronic levels: ground state [|1

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Pavlov, S. G., Deßmann, N., Redlich, B., Van Der Meer, A. F. G., Abrosimov, N. V., Riemann, H., … Hübers, H. W. (2018). Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon. Physical Review X, 8(4). https://doi.org/10.1103/PhysRevX.8.041003

Competing Inversion-Based Lasing and Raman Lasing in Doped Silicon

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