Synthesis and characterization of Cu doped chromium oxide (Cr2O3) thin films

Abstract

Cu-doped Cr2O3 thin films were deposited onto glass substrate by the sol-gel dip-coating (SGDC) process using dopant values of 0, 3, 6, 9 and 12%. The Chromium (III) Nitrate Nonahydrate [Cr(NO3)3·9H2O] was used as a Cr source, whilst for the dopant, the corresponding nitrate (Cu(NO3)2) was used. The crystal structure, as well as the optical and electrical properties were examined. XRD data showed that the films with a high degree of crystallinity were rhombohedral Cr2O3 phase. The crystallite size reduces with increase in Cu doping proportion. The AFM results indicate a decrease in the surface roughness of the doped Cr2O3: Cu thin films. The UV-Vis spectra of the Cu doped-Cr2O3 films showed high transparency in the visible region. The optical band gap of Cr2O3 thin films decreases with increasing in Cu doping rate. The Nyquist plot shows that the equivalent circuit of Cu doped-Cr2O3 films is a parallel circuit RpCp. As the concentration of Cu increases, Resistance RP regresses while capacitance Cp increases.