We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport. © 2013 American Chemical Society.
CITATION STYLE
Yager, T., Lartsev, A., Mahashabde, S., Charpentier, S., Davidovikj, D., Danilov, A., … Kubatkin, S. (2013). Express optical analysis of epitaxial graphene on SiC: Impact of morphology on quantum transport. Nano Letters, 13(9), 4217–4223. https://doi.org/10.1021/nl402347g
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