Abstract
In this paper, a 15.5 W Si-LDMOS balanced power amplifier (PA) technique operating in the 2.620–2.690 GHz frequency band for LTE systems is presented. The amplifier was designed using large signal Si-LDMOS models, which demonstrated saturation P1dB of 41 dBm and 53% PAE. The AM-AM and AM-PM measured data of the balanced amplifier is extracted and embedded in the device under test (DUT) based on IEEE 802.16 OFDM WLAN Transceiver system. A simple linear model was design for behavioral modelling of memoryless baseband digital pre-distorter. The nonlinearity of the balanced amplifier has been compensated using the Simulink version R2011a.
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Mohammed, B. A., Abduljabbar, N. A., Al-Sadoon, M. A. G., Hameed, K., Hussaini, A. S., Jones, S. M. R., … Abd-Alhameed, R. (2017). A 15.5 W Si-LDMOS balanced power amplifier with 53% ultimate PAE for high speed LTE. In Lecture Notes of the Institute for Computer Sciences, Social-Informatics and Telecommunications Engineering, LNICST (Vol. 186 LNICST, pp. 193–201). Springer Verlag. https://doi.org/10.1007/978-3-319-53850-1_19
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