Transparent oxide/metal/oxide trilayer electrode for use in top-emitting organic light-emitting diodes

Abstract

The most commonly used transparent electrode, indium-tin oxide (ITO), is costly and requires methods of deposition that are highly destructive to organic materials when it is deposited on top of the organic layers in top-emitting organic light-emitting devices (OLEDs). Here we have employed a trilayer electrode structure consisting of a thin layer of metal sandwiched between two MoO3 layers, which can be deposited through vacuum thermal evaporation without much damage to the organic active layers. Such MoO3/Au/MoO3 trilayer electrodes have a maximum transmittance of nearly 90% at 600 nm and a sheet resistance of <10 ohms per square (Ω/sq) with a 10-nm thick Au intermediate layer. Using these trilayers as the top transparent anode, we have fabricated top-emitting OLEDs based on either a fluorescent or phosphorescent emitter, and observed nearly identical emission spectra and similar external quantum efficiencies as compared to the more conventional bottom-emitting OLEDs based on the commercial ITO anode. The power efficiency of the top-emitting devices is 20% to 30% lower than the bottom-emitting devices due to the somewhat inferior charge injection in the top-emitting devices. The performance and emission characteristics of these devices indicate that this trilayer structure is a promising candidate as a transparent anode in top-emitting OLEDs.