Three-dimensional crystal-plasticity based model for intrinsic stresses in multi-junction photovoltaic

Abstract

Our understanding for intrinsic stresses and defects evolution in photovoltaic devices has became an essential part of new developments. In particular, Multi-Junction Photovoltaic (MJ-PV) modules depend on multi-layer structures that may suffer high dislocation-densities as a result of high lattice and thermal expansion coefficient mismatch. These defects limit the performance, reliability, and lifetime of PV devices. In the current study, a three-dimensional multiple-slip crystal-plasticity model and specialized finite-element formulations are used to investigate InGaN growth on Si substrates. The formulation is based on accounting for thermal and intrinsic stresses as a result of different processing conditions and microstructures. Furthermore, the formulation was used to investigate a recently developed technique, Embedded Void Approach (EVA), which can be used to address both the high density of defects and the cracking/bowing of InGaN growth on Si. The current work lays the groundwork for more extensive use of silicon in MJ-PV devices.