Abstract
Structure of chaotic generator is proposed that provides chaotic oscillations with required form of signal spectrum. A model system on 0.25-µm SiGe component library is developed, and IC layout is designed. An experimental sample of microwave chaotic source with bipolar transistor as the active element is fabricated with 0.25-µm SiGe process. The system demonstrates generation of ultrawideband chaotic oscillations of 3–7 GHz frequency range. Results of numerical simulation and experimental study of the chip are analyzed.
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CITATION STYLE
Efremova, E. V., & Dmitriev, A. S. (2017). Ultrawideband microwave 3–7 GHz chaotic oscillator implemented as SiGe integrated circuit. In Springer Proceedings in Physics (Vol. 191, pp. 71–80). Springer Science and Business Media, LLC. https://doi.org/10.1007/978-3-319-47810-4_7
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