Performance Analysis on the Effect of Doping Concentration in Copper Indium Gallium Selenide (CIGS) Thin-film Solar Cell

Abstract

A comparative investigation in the cell performance of Copper Indium Gallium Selenide (CIGS) thin-film solar cell has been reported. The main objective behind our work is to present the effect of the doping concentration on each layer i.e. window layer (ZnO), buffer layer (CdS) and absorption layer (CIGS) in the CIGS solar cell to find out the optimum doping concentration using ADEPT 2.0, a 1D simulation software. The device parameters are optimized separately for each layer. Energy conversion efficiency is calculated from light J-V characteristics curve. A total-area efficiency of 19·75% for ZnO:Al/i-ZnO/CdS/CIGS based thin-film solar cells has been reported.