Quantum hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

Abstract

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10 â '9 in relative value, but operating at lower magnetic fields than 10â €‰T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10â €‰T up to 19â €‰T at 1.4â €‰K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.