In this chapter, a single-mask substrate transfer process for fabrication of high-aspect-ratio (HAR) suspended structures is presented [1–3]. The HAR silicon structures are fabricated using deep reactive ion etching (DRIE) technique and then transferred to a glass wafer though silicon/thin film/glass anodic bonding and silicon thinning techniques.
CITATION STYLE
Liu, A. Q. (2010). Substrate Transfer Process (pp. 207–227). https://doi.org/10.1007/978-0-387-46262-2_9
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