CA resist with side chain PAG group for EUV resist

Abstract

A novel resist system was designed and synthesized to reduce line edge roughness (LER) and increase sensitivity for a resist in extreme ultraviolet lithography (EUV) and electron beam (EB) lithography. A sulfonium salts group was supplied at side chain of base polymer system. The base polymer consists of copolymer of polyhydroxy styrene, solution inhibitor and monomer containing PAG as a backbone. Under EB exposure, a LER of 2.0 nm (3σ) is achieved using PAG bounded polymer. A LER of PAG bounded polymer is smaller than that of PAG blended polymer. Under EUV exposure. E0 sensitivity of 0.9 mJ/cm 2 and a low outgassing characteristics are achieved. ©2006TAPJ.