In-situ cathodoluminescence experiments have been performed to follow the first step of the degradation of GaN quantum dots embedded in AlGaN barriers. The time evolution of the spectra is interpreted as resulting from the interdiffusion of Al in GaN dots.
CITATION STYLE
Sieber, B. (2008). Interdiffusion as the First Step of GaN Quantum Dot Degradation Demonstrated by Cathodoluminescence Experiments. In Microscopy of Semiconducting Materials 2007 (pp. 459–462). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_98
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