Abstract
This Chapter analyzes the electrostatics of the multigate MOS system. Using quantum-mechanical concepts, it describes electron energy quantization and the properties of a one-dimensional and two-dimensional electron gas. The effects of tunneling through thin gate dielectrics on the electron population of a device are studied as well. © 2008 Springer Science+Business Media, LLC.
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CITATION STYLE
APA
Majkusiak, B. (2008). Physics of the multigate MOS system. In FinFETs and Other Multi-Gate Transistors (pp. 155–189). Springer US. https://doi.org/10.1007/978-0-387-71752-4_4
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