High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers

13Citations
Citations of this article
8Readers
Mendeley users who have this article in their library.
Get full text

Abstract

In this study, we have demonstrated a high-efficiency InGaN red (625 nm) light-emitting diode (LED) with an external quantum efficiency (EQE) of 10.5% at a current density of 10 A/cm2. To achieve this, we introduced GaN cap layers on InGaN quantum wells and AlGaN interlayers. The introduction of these layers resulted in a red shift of the wavelength. The AlGaN interlayer caused band bending, while the GaN cap layer modulated the electron wavefunction, thus helping to achieve the wavelength red shift of the InGaN red LED with high EQE. This technology is crucial for the realization of discrete or monolithic full-color micro-LED displays.

Cite

CITATION STYLE

APA

Lee, D. G., Choi, Y., Jung, S., Kim, Y., Park, S. Y., Choi, P. J., & Yoon, S. (2024). High-efficiency InGaN red light-emitting diodes with external quantum efficiency of 10.5% using extended quantum well structure with AlGaN interlayers. Applied Physics Letters, 124(12). https://doi.org/10.1063/5.0187902

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free