Spin-flip-driven anomalous Hall effect and anisotropic magnetoresistance in a layered Ising antiferromagnet

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Abstract

The influence of magnetocrystalline anisotropy in antiferromagnets is evident in a spin flip or flop transition. Contrary to spin flops, a spin-flip transition has been scarcely presented due to its specific condition of relatively strong magnetocrystalline anisotropy and the role of spin-flips on anisotropic phenomena has not been investigated in detail. In this study, we present antiferromagnet-based functional properties on an itinerant Ising antiferromagnet Ca0.9Sr0.1Co2As2. In the presence of a rotating magnetic field, anomalous Hall conductivity and anisotropic magnetoresistance are demonstrated, the effects of which are maximized above the spin-flip transition. Moreover, a joint experimental and theoretical study is conducted to provide an efficient tool to identify various spin states, which can be useful in spin-processing functionalities.

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Oh, D. G., Kim, J. H., Kim, M. K., Jeong, K. W., Shin, H. J., Hong, J. M., … Choi, Y. J. (2023). Spin-flip-driven anomalous Hall effect and anisotropic magnetoresistance in a layered Ising antiferromagnet. Scientific Reports, 13(1). https://doi.org/10.1038/s41598-023-30076-2

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