A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al 0.25Ga0.75N) barrier layer and relies on an induced two-dimensional electron gas for operation is presented. Single finger devices were fabricated using 10 and 20 nm plasma-enhanced chemical vapor-deposited silicon dioxide (SiO2) as the gate dielectric. They demonstrated threshold voltages (Vth) of 3 and 2 V, and very high maximum drain currents (IDSmax) ) of over 450 and 650 mA/mm, at a gate voltage (VGS) of 6 V, respectively. The proposed device is seen as a building block for future power electronic devices, specifically as the driven device in the cascode configuration that employs GaN-based enhancement-mode and depletion-mode devices. © 2014 IEEE.
CITATION STYLE
Brown, R., MacFarlane, D., Al-Khalidi, A., Li, X., Ternent, G., Zhou, H., … Wasige, E. (2014). A sub-critical barrier thickness normally-Off AlGaN/GaN MOS-HEMT. IEEE Electron Device Letters, 35(9), 906–908. https://doi.org/10.1109/LED.2014.2334394
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