Abstract
We find that two paramagnetic]] trivalent silicon" centers appear to be responsible for damage resulting from Fowler-Nordheim injection of electrons into thermal oxides on silicon.
Cite
CITATION STYLE
APA
Warren, W. L., & Lenahan, P. M. (1986). Electron spin resonance study of high field stressing in metal-oxide-silicon device oxides. Applied Physics Letters, 49(19), 1296–1298. https://doi.org/10.1063/1.97391
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