Optical transition energies in a group III–V–N nano-dot

Abstract

Group III–V–N materials especially GaInNAs semiconductors are significantly attracted much attention due to its potential applications in lasers and solar cells. GaInAs is lattice matched with GaAs and Ge substrate by altering the host composition for obtaining band gap of the material. In the present paper, the electronic properties are brought out in a Ga1−xInxNy As1−y/GaAs quantum dot taking into account the strain effects which are involved in the heterostructure at the interface between the materials. Binding energies are obtained for the ground state and first excited states taking into consideration of quantum confinement effect. Optical transition energies are found for the two level system in the nitride nano-dot. These properties are more influenced in the strong confinement region whereas the effect shows the less impact when the dot size becomes larger. The incorporation of impurities (nitrogen) in the GaInNAs semiconducting material will drastically change its electronic properties considerably.