Impact of engineered ti layer on the memory performance of HfO x-based resistive memory

Abstract

The impact of engineered Ti at the interface of HfOx/TiN on the performance of a HfOx resistive memory (RM) is investigated. Microstructures of 5 nm thick HfOx films seem insensitive to the bottom layer (BL) with/without Ti. The switching behavior of the HfOx RM depends on the position and the thickness of the Ti layer. More oxygen atoms in HfOx films are captured during the deposition of a Ti overlayer; this result leads to a Ti/HfOx device with lower forming voltage and initial resistance. A thick Ti BL (>30 nm) results in a HfOx /Ti device with yield of 100% and superior endurance (>106 cycles). © 2010 The Electrochemical Society.