Electrical transport in high-quality graphene pnp junctions

Abstract

We fabricate and investigate high-quality graphene devices with contactless, suspended top gates and demonstrate the formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct oscillations in the npn regime, arising from the Fabry-Perot interference of holes between the two pn interfaces. At high magnetic fields, we observe well-defined quantum Hall plateaus, which can be satisfactorily fit to theoretical calculations based on the aspect ratio of the device. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.