Synthesis of graphene by low pressure chemical vapor deposition (LPCVD) method

Abstract

Graphene, the wonder material, is a one atom thick two dimensional crystal lattice having a honeycomb like structure. Its peculiar electrical, mechanical and optical properties have attracted the attention of the researchers like never before. Graphene film with two dimensional structure were successfully prepared via a physical method on Ni coated Si wafer using low pressure chemical vapor (LPCVD) method at temperature as low as 650 °C. For this growth acetylene was used as source gas and the hydrogen as the carrier gas in ratio of 1:20. The as-grown graphene was characterized using Scanning Electron Microscopy, Fourier transformation infra-red (FTIR) and Raman Spectroscopy. The SEM, FTIR and Raman spectroscopy confirmed the successful growth of multilayer graphene.