Analytical modelling of room-temperature GaAs/InAs0.3Sb0.7 Detector for H2S Gas Detection

Abstract

An analytical model for the characterisation of GaAs/InAsSb-based photovoltaic detector has been presented. The model has been applied for analysis and simulation of an InAs0.3Sb0.7 photovoltaic detector for H2S gas monitoring application. Effect of material parameters, trap level (et) and carrier density, in the trap level (Nf) on R0A and detectivity, has been thoroughly investigated by GaAs/InAs0.3Sb0.7 detector. Result reviles that the net value of R0A as well as detectivity is largely altered by any variation of trap level condition. Detectivity is improved with reducing the trap levels. Obtained high detectivity (>109 mHz1/2/W) and efficiency on the basis of this model lies in wavelength range 2.6–3.15 µm with their peaks at 2.7 µm wavelength, which reveals that this detector is best suited for the detection of H2S gas.