Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO[sub 3] Thin Films with Ti(mpd)(tmhd)[sub 2] as a Ti Source

Abstract

The deposition characteristics of (Ba, Sr)TiO 3 (BST) thin films with direct liquid injection metallorganic chemical vapor deposition on a Pt/SiO 2 /Si wafer were investigated. A single cocktail solution of Ba(methd) 2 (methd = methoxyethoxytetramethylheptanedionate), Sr(methd) 2 , and Ti(mpd)(tmhd) 2 (mpd = methylpentanediol, tmhd = tetramethylheptanedionate) with methanol solvent was used as a precursor. Ti(mpd)(tmhd) 2 as a Ti precursor showed better thermal stability than did Ti(i-OPr): 2 (tmhd) 2 , and alleviated Ti-rich hump regions due to the weak Ti-(i-OPr) bond strength of Ti(i-OPr) 2 (tmhd) 2 . Some haziness in the film was observed when the reactor pressure was increased. Conformal step coverage ( > 90%) and good electric properties (leakage less than 2 × 10 -7 A/cm 2 at I V) were obtained. © 2001 The Electrochemical Society. [DOI: 10.1149/1.1368103] All rights reserved.