Influence of ion irradiation on the resistive switching parameters of SiOx-based thin-film structures

Abstract

For the memristive Au/SiOx/TiN/Ti structures produced by magnetron sputtering and demonstrating reproducible bipolar resistive switching, the dependence of resistive states on the dose of irradiation with H+ and Ne+ ions with energy of 150 keV has been established. It is shown that, under proton irradiation, the resistive switching is not deteriorated up to the dose of 1.1016 cm-2, and, in the case of Ne+ irradiation - up to the dose of 3.31015 cm-2 (equivalent by the ionization losses). As the Ne+ ions produce three orders of magnitude more elastic collisions than protons (for the same dose), the obtained results allow to predict the high radiation tolerance of the memristive structures to both ionization and displacement damage.