Wafer-scale epitaxy of transition-metal dichalcogenides with continuous single-crystallinity and engineered defect density

Abstract

Research on electronic channel materials has traditionally focused on bulk and nanocrystals, nanowires, and nanotubes. However, the recent surge of interest in two-dimensional (2D) transition-metal dichalcogenides (TMDs) has emerged as a game-changer in this field. The atomically thin structure of 2D TMDs offers unique electronic and optical properties, which have been shown to have significant potential in various applications, such as optoelectronics, energy harvesting, and spintronics. Epitaxy growth of single-crystal 2D TMDs on oxide or metallic substrates has opened up new opportunities for direct integration into existing manufacturing pathways. In this article, we discuss recent advances in achieving continuous single-crystallinity of 2D TMDs on oxide and metallic substrates by controlling the nucleation and growth rate of crystalline domains. We also review strategies for the controlled introduction of defects through postgrowth processing and substrate engineering. Finally, we highlight emerging strategies, new opportunities, and remaining challenges for bridging the gap between lab innovations and commercialization. The ability to grow high-quality 2D TMDs on scalable and industry-compatible substrates represents a significant breakthrough in the field of electronic materials and has the potential to revolutionize the semiconductor industry. Despite the remaining challenges, the future of 2D TMDs looks promising. Their integration into existing manufacturing pathways could open up new avenues for advanced electronic devices with improved performance and reduced power consumption. Graphical abstract: [Figure not available: see fulltext.]