Sputtered Mo-bilayer thin films with reduced thickness and improved electrical resistivity

Abstract

In this study, Mo-bilayer film, the thickness of which was reduced to approximately 270 nm with a very low resistivity of 14 μΩ.cm, was successfully grown by DC magnetron sputter. The Mo-bilayer, whose bottom and top layers were obtained by high pressure sputter (HPS) and low pressure sputter (LPS) respectively, demonstrates good adhesivity and crystalline properties, together with high reflectance. In order to obtain Mo-bilayer with these improved properties, we first determined the optimal growth temperature and pressure parameters by checking the structural and electrical properties respectively of Mo-single layers. As a result, we achieved a deposit of Mo-bilayer thin film that can be used as a good back contact layer in solar cell applications, both in terms of material cost saving and its superior properties, even at such low thickness.