Indium tin oxide films with low resistivity at room temperature using dc magnetron sputtering with grid electrode

Abstract

Indium tin oxide films were deposited at room temperature using a direct current magnetron sputtering system with a grid electrode. The glow discharge was confined between the target and the grid by inserting a grid electrode between the target and substrate of a conventional sputtering system. Next, various characterizations of indium tin oxide films were conducted including crystallinity, electrical properties, surface concentration, optical transmittance, and surface roughness. A negative grid voltage changed or decreased the crystallinity of the films. Moreover, suppressing the diffusion of the glow discharge by applying a negative grid voltage was highly effective in decreasing the resistivity of the indium tin oxide film by increasing the carrier concentration and mobility at room temperature. © 2013 The Japan Institute of Metals and Materials.