Growth mechanism of nitrogen incoporated carbon nanotubes with RAP process

Abstract

The CNTs were synthesized with various growth durations from 10min to 120min by dc-plsam enhanced chemical vapor deposition (dc-PECVD). The mixture of C2H2/NH3 and H2 gases was used for CNT growth. As the growth time is increase, the CNTs show the tendency gathering into the center of catalyst pattern due to the van der waals interaction between the CNTs and bonding to each other. In the 80 min growth, the CNTs show that the ~ 1μm thick diamter and up to 35μm length. We investiged these CNTs by the scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (TEM-EDS) and Raman. The bonded CNTs was covered by silicon comes from the silicon substrate and nitrogen was incoporated by hiding of catalyst metals. We obtained ratio of N/C and Si/C is ranged 0.25 ~ 0.55, 0.74 ~ 1.19 respectively.